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000058106 084__ $$2WoS$$aEngineering, Electrical & Electronic
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000058106 1001_ $$0P:(DE-HGF)0$$aMustafa, J.$$b0
000058106 245__ $$aCapacitive-resistive nondriven plateline cell architecture for RRAM technology
000058106 260__ $$aMünchen$$bElsevier$$c2006
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000058106 520__ $$aA new memory cell concept, which is appropriate for the use with resistive hysteretic memory elements is introduced. Resistive memories are one of the main memory development streams today. The introduced concept can be used to facilitate the integration with current CMOS technology, where no plateline is required. This is accomplished by using a capacitor, which is serially connected to the resistive element. (c) 2005 Elsevier GmbH. All rights reserved.
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000058106 65320 $$2Author$$aresistive hysteretic elements
000058106 65320 $$2Author$$anondriven plateline
000058106 65320 $$2Author$$anonvolatile
000058106 65320 $$2Author$$aRRAM
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000058106 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b1$$uFZJ
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