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@ARTICLE{Mustafa:58106,
author = {Mustafa, J. and Waser, R.},
title = {{C}apacitive-resistive nondriven plateline cell
architecture for {RRAM} technology},
journal = {AEU - International Journal of Electronics and
Communications},
volume = {60},
issn = {1434-8411},
address = {München},
publisher = {Elsevier},
reportid = {PreJuSER-58106},
pages = {459 - 461},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {A new memory cell concept, which is appropriate for the use
with resistive hysteretic memory elements is introduced.
Resistive memories are one of the main memory development
streams today. The introduced concept can be used to
facilitate the integration with current CMOS technology,
where no plateline is required. This is accomplished by
using a capacitor, which is serially connected to the
resistive element. (c) 2005 Elsevier GmbH. All rights
reserved.},
keywords = {J (WoSType)},
cin = {IFF-IEM / IFF-6 / CNI / JARA-FIT},
ddc = {004},
cid = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB786 /
I:(DE-Juel1)VDB381 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Engineering, Electrical $\&$ Electronic /
Telecommunications},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000238314000007},
doi = {10.1016/j.aeue.2005.09.005},
url = {https://juser.fz-juelich.de/record/58106},
}