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@ARTICLE{Halder:58107,
      author       = {Halder, S. and Boettger, U. and Schneller, T. and Waser, R.
                      and Baldus, O. and Jacobs, P. and Wehner, M.},
      title        = {{L}aser annealing of {BST} thin films with reduced cracking
                      at an elevated temperature},
      journal      = {Materials science and engineering / B},
      volume       = {133},
      issn         = {0921-5107},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-58107},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {An excimer laser (KrF, 248 nm) was used to crystallize
                      barium strontium titanate thin films of thickness 95 nm.
                      Numerical simulation was first performed to get an idea
                      about the laser energy suitable for crystallization.
                      Amorphous films deposited by chemical solution deposition
                      were irradiated at different energies with different
                      frequencies (40-150 Hz), laser fluences (100-150 mJ/cm(2))
                      and pulses (400-1000) while maintaining the substrate at 25
                      and 250 degrees C. Films were found to crystallize above 100
                      mJ/cm(2) in both cases. Films crystallized with substrate
                      temperatures of 250 degrees C were noticed to have less
                      cracks. The microstructure of these films were analyzed with
                      a scanning electron microscope. From the XPS analysis, it is
                      inferred that the top few nanometers have a different
                      structure compared to normal furnace annealed thin films.
                      This top surface layer was found to be dependent on the
                      laser energy used for crystallization. The dielectric
                      constant was found to increase from 60 to 180 for the 95 nm
                      thin films on increasing the laser fluence. Films
                      crystallized with 120mJ/cm(2) while maintaining a substrate
                      temperature of 250 degrees C have leakage current densities
                      of 1 x 10(-7) A/cm(2) at 1.5 V and a dielectric constant of
                      200. (c) 2006 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000240633500044},
      doi          = {10.1016/j.mseb.2006.06.003},
      url          = {https://juser.fz-juelich.de/record/58107},
}