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@ARTICLE{Petraru:58230,
author = {Petraru, A. and Pertsev, N. A. and Kohlstedt, H. H. and
Poppe, U. and Waser, R. and Solbach, A. and Klemradt, U.},
title = {{P}olarization and lattice strains in epitaxial
{B}a{T}i{O}3 films grown by high-pressure sputtering},
journal = {Journal of applied physics},
volume = {101},
issn = {0021-8979},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-58230},
pages = {114106},
year = {2007},
note = {Record converted from VDB: 12.11.2012},
abstract = {High-quality BaTiO3 films with thicknesses ranging from 2.9
to 175 nm were grown epitaxially on SrRuO3-covered
(001)-oriented SrTiO3 substrates by high-pressure
sputtering. The crystal structure of these films was studied
by conventional and synchrotron x-ray diffraction. The
in-plane and out-of-plane lattice parameters were determined
as a function of film thickness by x-ray reciprocal space
mapping around the asymmetric ((1) over bar 03) Bragg
reflection. BaTiO3 films were found to be fully strained by
the SrTiO3 substrate up to a thickness of about 30 nm.
Ferroelectric capacitors were then fabricated by depositing
SrRuO3 top electrodes, and the polarization-voltage
hysteresis loops were recorded at the frequencies 1-30 kHz.
The observed thickness effect on the lattice parameters and
polarization in BaTiO3 films was analyzed in the light of
strain and depolarizing-field effects using the nonlinear
thermodynamics theory. The theoretical predictions are in
reasonable agreement with the measured thickness
dependences, although the maximum experimental values of the
spontaneous polarization and the out-of-plane lattice
parameter exceed the theoretical estimates (43 mu C/cm(2) vs
35 mu C/cm(2) and 4.166 angstrom vs 4.143 angstrom).
Possible origins of the revealed discrepancy between theory
and experiment are discussed. (c) 2007 American Institute of
Physics.},
keywords = {J (WoSType)},
cin = {CNI / IFF-6 / IFF-8 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB786 /
I:(DE-Juel1)VDB788 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000247306000113},
doi = {10.1063/1.2745277},
url = {https://juser.fz-juelich.de/record/58230},
}