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000058289 0247_ $$2DOI$$a10.1109/TED.2007.904402
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000058289 041__ $$aeng
000058289 084__ $$2WoS$$aEngineering, Electrical & Electronic
000058289 084__ $$2WoS$$aPhysics, Applied
000058289 1001_ $$0P:(DE-Juel1)VDB61376$$aSchindler, C.$$b0$$uFZJ
000058289 245__ $$aBipolar and unipolar resistive switching in Cu-doped SiO2
000058289 260__ $$c2007
000058289 300__ $$a2762
000058289 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000058289 440_0 $$02508$$aIEEE Transactions on Electron Devices$$v54$$x0018-9383
000058289 500__ $$aRecord converted from VDB: 12.11.2012
000058289 520__ $$aScalable nonvolatile memory devices that operate at low voltage and current, exhibit multilevel cell capability, and can be read nondestructively using simple circuitry, are highly sought after. Such devices are of particular interest if they are compatible with back-end-of-line processing for CMOS integrated circuits. A variety of resistance-change technologies show promise in this respect, but a new approach that is based on switching in copper-doped silicon dioxide may be the simplest and least expensive to integrate. This paper describes the characteristics Of W-(Cu/SiO2)-Cu programmable metallization cell (PMC) devices formed by the thermal diffusion of Cu into deposited SiO2 PMC devices operate by the electrochemical control of metallic pathways in solid electrolytes. Both unipolar and bipolar resistive switching could be attained in these devices. Bipolar switching, which is identical to that seen in PMC devices based On other solid electrolytes, was observed for low bias (a few tenths of volts) and programming currents in the microampere range. The resistance ratio between high and low states was on the order of 10(3), and a multibit storage is considered possible via the strong dependence of ON-state resistance on programming current. The low and high resistance states were stable for more than 5 x 10(4) s. The devices could be made to exhibit unipolar switching using a negative bias on the order of -1V combined with erase currents of hundreds of microampere to a few milliampere. In this case, the OFF/ON ratio was 10(6).
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000058289 65320 $$2Author$$aelectrical switching
000058289 65320 $$2Author$$anonvolatile memory
000058289 65320 $$2Author$$asilicon oxide
000058289 65320 $$2Author$$asolid electrolytes
000058289 650_7 $$2WoSType$$aJ
000058289 7001_ $$0P:(DE-Juel1)VDB70639$$aThermada, S.C.P.$$b1$$uFZJ
000058289 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
000058289 7001_ $$0P:(DE-Juel1)VDB70640$$aKozicki, M.N.$$b3$$uFZJ
000058289 773__ $$0PERI:(DE-600)2028088-9$$a10.1109/TED.2007.904402$$gVol. 54, p. 2762$$p2762$$q54<2762$$tIEEE Transactions on Electron Devices$$v54$$x0018-9383$$y2007
000058289 8567_ $$uhttp://dx.doi.org/10.1109/TED.2007.904402
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000058289 9141_ $$y2007
000058289 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000058289 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000058289 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000058289 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
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