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@ARTICLE{Schindler:58289,
      author       = {Schindler, C. and Thermada, S.C.P. and Waser, R. and
                      Kozicki, M.N.},
      title        = {{B}ipolar and unipolar resistive switching in {C}u-doped
                      {S}i{O}2},
      journal      = {IEEE Transactions on Electron Devices},
      volume       = {54},
      issn         = {0018-9383},
      reportid     = {PreJuSER-58289},
      pages        = {2762},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Scalable nonvolatile memory devices that operate at low
                      voltage and current, exhibit multilevel cell capability, and
                      can be read nondestructively using simple circuitry, are
                      highly sought after. Such devices are of particular interest
                      if they are compatible with back-end-of-line processing for
                      CMOS integrated circuits. A variety of resistance-change
                      technologies show promise in this respect, but a new
                      approach that is based on switching in copper-doped silicon
                      dioxide may be the simplest and least expensive to
                      integrate. This paper describes the characteristics Of
                      W-(Cu/SiO2)-Cu programmable metallization cell (PMC) devices
                      formed by the thermal diffusion of Cu into deposited SiO2
                      PMC devices operate by the electrochemical control of
                      metallic pathways in solid electrolytes. Both unipolar and
                      bipolar resistive switching could be attained in these
                      devices. Bipolar switching, which is identical to that seen
                      in PMC devices based On other solid electrolytes, was
                      observed for low bias (a few tenths of volts) and
                      programming currents in the microampere range. The
                      resistance ratio between high and low states was on the
                      order of 10(3), and a multibit storage is considered
                      possible via the strong dependence of ON-state resistance on
                      programming current. The low and high resistance states were
                      stable for more than 5 x 10(4) s. The devices could be made
                      to exhibit unipolar switching using a negative bias on the
                      order of -1V combined with erase currents of hundreds of
                      microampere to a few milliampere. In this case, the OFF/ON
                      ratio was 10(6).},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / CNI / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000249904100025},
      doi          = {10.1109/TED.2007.904402},
      url          = {https://juser.fz-juelich.de/record/58289},
}