TY  - JOUR
AU  - Schindler, C.
AU  - Guo, X.
AU  - Besmehn, A.
AU  - Waser, R.
TI  - Resistive switching in Ge0.3Se0.7 films by means of copper ion migration
JO  - Zeitschrift für Physikalische Chemie
VL  - 221
SN  - 0942-9352
CY  - München
PB  - Oldenbourg
M1  - PreJuSER-58290
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - Cu/Ge0.3Se0.7/Pt cells were prepared and bipolar resistive switching in Ge0.3Se0.7 films by means of copper ion migration was examined. The cell was switched from the high to the low resistance state at about -50mV, and it was switched back to the high resistance state at about 100mV. The resistance ratio between the high and the low state was up to 200. Up to approximately 10(4) switching cycles were achieved. Pulse measurements showed that the two resistance states were tuneable by varying the applied voltage and the pulse length. Therefore, it is possible to store more than one bit per cell. The current density is independent of the electrode diameter, indicating that the cell can be scaled down to the range of nanometers. Due to the low switching voltages, non-destructive read out operation, high storage density, and scalability, such cells are promising for future memory applications.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000252221500004
DO  - DOI:10.1524/zpch.2007.221.11-12.1469
UR  - https://juser.fz-juelich.de/record/58290
ER  -