% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Schindler:58290,
      author       = {Schindler, C. and Guo, X. and Besmehn, A. and Waser, R.},
      title        = {{R}esistive switching in {G}e0.3{S}e0.7 films by means of
                      copper ion migration},
      journal      = {Zeitschrift für Physikalische Chemie},
      volume       = {221},
      issn         = {0942-9352},
      address      = {München},
      publisher    = {Oldenbourg},
      reportid     = {PreJuSER-58290},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Cu/Ge0.3Se0.7/Pt cells were prepared and bipolar resistive
                      switching in Ge0.3Se0.7 films by means of copper ion
                      migration was examined. The cell was switched from the high
                      to the low resistance state at about -50mV, and it was
                      switched back to the high resistance state at about 100mV.
                      The resistance ratio between the high and the low state was
                      up to 200. Up to approximately 10(4) switching cycles were
                      achieved. Pulse measurements showed that the two resistance
                      states were tuneable by varying the applied voltage and the
                      pulse length. Therefore, it is possible to store more than
                      one bit per cell. The current density is independent of the
                      electrode diameter, indicating that the cell can be scaled
                      down to the range of nanometers. Due to the low switching
                      voltages, non-destructive read out operation, high storage
                      density, and scalability, such cells are promising for
                      future memory applications.},
      keywords     = {J (WoSType)},
      cin          = {CNI / IFF-6 / ZCH / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB786 /
                      I:(DE-Juel1)ZCH-20090406 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Physical},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000252221500004},
      doi          = {10.1524/zpch.2007.221.11-12.1469},
      url          = {https://juser.fz-juelich.de/record/58290},
}