Home > Publications database > Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems > print

001     58359
005     20200423204522.0
024 7 _ |a 10.1063/1.2793686
|2 DOI
024 7 _ |a WOS:000249787000110
|2 WOS
024 7 _ |a 2128/17990
|2 Handle
037 _ _ |a PreJuSER-58359
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Guo, X.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB518
245 _ _ |a Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2007
300 _ _ |a 133513
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 91
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Different coplanar Pt/Ag structures were prepared by photolithography on SiO2 substrates, and Pt/H2O/Ag cells were formed by adding de-ionized H2O to the coplanar Pt/Ag structures. The Pt/H2O/Ag cell is utilized here as a model system, due to the feasibility of visual inspection of the switching process. Bipolar switching was achieved for the cell. Scanning electron microscopy (SEM) investigations demonstrated that the growth and dissolution of Ag dendrites are responsible for the resistive switching. The Ag dendrite morphology is proposed to be the origin of the asymmetrical dissolution during the switching-off process, hence the bipolar nature of the switching characteristics. (c) 2007 American Institute of Physics.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Schindler, C.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB61376
700 1 _ |a Menzel, S.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 3
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1063/1.2793686
|g Vol. 91, p. 133513
|p 133513
|q 91<133513
|0 PERI:(DE-600)1469436-0
|t Applied physics letters
|v 91
|y 2007
|x 0003-6951
856 7 _ |u http://dx.doi.org/10.1063/1.2793686
856 4 _ |u https://juser.fz-juelich.de/record/58359/files/1.2793686.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/58359/files/1.2793686.gif?subformat=icon
|x icon
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/58359/files/1.2793686.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/58359/files/1.2793686.jpg?subformat=icon-700
|x icon-700
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/58359/files/1.2793686.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:58359
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2007
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
920 1 _ |k IFF-6
|l Elektronische Materialien
|d 31.12.2010
|g IFF
|0 I:(DE-Juel1)VDB786
|x 0
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
|g CNI
|z 381
|0 I:(DE-Juel1)VDB381
|x 1
970 _ _ |a VDB:(DE-Juel1)91840
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
980 1 _ |a FullTexts
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB381

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21