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@ARTICLE{Schpers:5845,
      author       = {Schäpers, T. and Guzenko, V. A. and Bringer, A. and
                      Akabori, M. and Hagedorn, M. and Hardtdegen, H.},
      title        = {{S}pin-orbit coupling in {G}ax{I}n1-x{A}s/{I}n{P}
                      two-dimensional electron gases and quantum wire structures},
      journal      = {Semiconductor science and technology},
      volume       = {24},
      issn         = {0268-1242},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {PreJuSER-5845},
      pages        = {064001},
      year         = {2009},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In this work, the effect of spin-orbit coupling in
                      two-dimensional electron gases and quantum wire structures
                      is discussed. First, the theoretical framework is introduced
                      including spin-orbit coupling due to structural inversion
                      asymmetry, the so-called Rashba effect, as well as the
                      Dresselhaus term. The latter originates from bulk inversion
                      asymmetry. With regard to wire structures, special attention
                      is devoted to the influence of the particular shape of the
                      confinement potential on the energy spectrum. As a model
                      system GaxIn1-xAs/InP heterostructures are chosen, where
                      different thicknesses of the strained Ga0.23In0.77As channel
                      layer were introduced, in order to adjust the strength of
                      the spin-orbit coupling. Hall bar structures as well as sets
                      of identical wires with different widths were prepared. In
                      two-dimensional electron gases, the strength of the
                      spin-orbit coupling was extracted by analyzing the
                      characteristic beating pattern in the Shubnikov-de Haas
                      oscillations. In addition, the weak antilocalization was
                      utilized to obtain information on the spin-orbit coupling.
                      It is shown that for decreasing width of the strained layer
                      the Rashba effect, which dominates in our layer systems, is
                      increased. This behavior is attributed to the larger
                      interface contribution if the electron wavefunction is
                      strongly confined. The measurements on the wire structures
                      revealed a transition from weak antilocalization to weak
                      localization if the wire width is decreased. This effect is
                      attributed to an enhanced spin diffusion length for strongly
                      confined systems.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT / IFF-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)VDB781},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Materials
                      Science, Multidisciplinary / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000266287000002},
      doi          = {10.1088/0268-1242/24/6/064001},
      url          = {https://juser.fz-juelich.de/record/5845},
}