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000058625 084__ $$2WoS$$aElectrochemistry
000058625 084__ $$2WoS$$aMaterials Science, Coatings & Films
000058625 1001_ $$0P:(DE-Juel1)VDB50077$$aWatanabe, T.$$b0$$uFZJ
000058625 245__ $$aLiquid injection ALD of Pb(Zr,Ti)Ox thin films by a combination of self-regulating component oxide processes
000058625 260__ $$aPennington, NJ$$bElectrochemical Society$$c2007
000058625 300__ $$aG262 - G269
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000058625 440_0 $$03889$$aJournal of the Electrochemical Society$$v154$$x0013-4651
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000058625 520__ $$aQuaternary Pb(Zr, Ti)O-x [PZT] films were deposited at 240 degrees C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, TiOx, and ZrOx thin films. We used water as the oxidant and two sets of precursors: Pb(C11H19O2)(2) [Pb(DPM)(2)], Zr(C11H19O2)(4) [Zr(DPM)(4)], and either Ti(OC3H7)(2) (C11H19O2)(2) [Ti(Oi - Pr)(2) (DPM)(2)] or (TiOC3H7)(4) [Ti(Oi-Pr)(4)]. These precursors were dissolved in ethylcyclohexane and separately injected into a vaporizer. The deposition rates of the metal elements were investigated as a function of the input of the solutions. We started the ALD - PZT process with Ti(Oi - Pr)(2)(DPM)(2). When the input of one solution was increased, the deposition rates of the metal elements continued to increase or fluctuate, showing a complex interdependence. A PZT film deposited on a three-dimensional (3D) structure had an inhomogeneous cation composition. The film uniformity on the 3D structure was significantly improved by substituting Ti(Oi - Pr)(2)(DPM)(2) with Ti(Oi - Pr)(4). In this ALD - PZT process, self-regulated growths were confirmed for Pb and Zr. Although the deposition rate of Ti did not saturate due to a catalytic decomposition, this study suggests that the multilayer stacking ALD process is an effective method for building up homogeneous layers of multicomponent materials on desired 3D structures. (c) 2007 The Electrochemical Society.
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000058625 7001_ $$0P:(DE-Juel1)VDB3102$$aHoffmann-Eifert, S.$$b1$$uFZJ
000058625 7001_ $$0P:(DE-Juel1)VDB42216$$aPeter, F.$$b2$$uFZJ
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000058625 7001_ $$0P:(DE-Juel1)VDB3077$$aJia, C.$$b4$$uFZJ
000058625 7001_ $$0P:(DE-Juel1)VDB50078$$aHwang, C. S.$$b5$$uFZJ
000058625 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6$$uFZJ
000058625 773__ $$0PERI:(DE-600)2002179-3$$a10.1149/1.2789295$$gVol. 154, p. G262 - G269$$pG262 - G269$$q154<G262 - G269$$tJournal of the Electrochemical Society$$v154$$x0013-4651$$y2007
000058625 8567_ $$uhttp://dx.doi.org/10.1149/1.2789295
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