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@ARTICLE{Watanabe:58625,
      author       = {Watanabe, T. and Hoffmann-Eifert, S. and Peter, F. and Mi,
                      S. and Jia, C. and Hwang, C. S. and Waser, R.},
      title        = {{L}iquid injection {ALD} of {P}b({Z}r,{T}i){O}x thin films
                      by a combination of self-regulating component oxide
                      processes},
      journal      = {Journal of the Electrochemical Society},
      volume       = {154},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-58625},
      pages        = {G262 - G269},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Quaternary Pb(Zr, Ti)O-x [PZT] films were deposited at 240
                      degrees C by a combination of liquid injection atomic layer
                      depositions (ALD) of binary PbO, TiOx, and ZrOx thin films.
                      We used water as the oxidant and two sets of precursors:
                      Pb(C11H19O2)(2) [Pb(DPM)(2)], Zr(C11H19O2)(4) [Zr(DPM)(4)],
                      and either Ti(OC3H7)(2) (C11H19O2)(2) [Ti(Oi - Pr)(2)
                      (DPM)(2)] or (TiOC3H7)(4) [Ti(Oi-Pr)(4)]. These precursors
                      were dissolved in ethylcyclohexane and separately injected
                      into a vaporizer. The deposition rates of the metal elements
                      were investigated as a function of the input of the
                      solutions. We started the ALD - PZT process with Ti(Oi -
                      Pr)(2)(DPM)(2). When the input of one solution was
                      increased, the deposition rates of the metal elements
                      continued to increase or fluctuate, showing a complex
                      interdependence. A PZT film deposited on a three-dimensional
                      (3D) structure had an inhomogeneous cation composition. The
                      film uniformity on the 3D structure was significantly
                      improved by substituting Ti(Oi - Pr)(2)(DPM)(2) with Ti(Oi -
                      Pr)(4). In this ALD - PZT process, self-regulated growths
                      were confirmed for Pb and Zr. Although the deposition rate
                      of Ti did not saturate due to a catalytic decomposition,
                      this study suggests that the multilayer stacking ALD process
                      is an effective method for building up homogeneous layers of
                      multicomponent materials on desired 3D structures. (c) 2007
                      The Electrochemical Society.},
      keywords     = {J (WoSType)},
      cin          = {CNI / IFF-6 / IFF-8 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB786 /
                      I:(DE-Juel1)VDB788 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000250504600058},
      doi          = {10.1149/1.2789295},
      url          = {https://juser.fz-juelich.de/record/58625},
}