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| Hauptseite > Publikationsdatenbank > Liquid injection ALD of Pb(Zr,Ti)Ox thin films by a combination of self-regulating component oxide processes > print |
| Hauptseite > Publikationsdatenbank > Liquid injection ALD of Pb(Zr,Ti)Ox thin films by a combination of self-regulating component oxide processes > print |
| 001 | 58625 | ||
| 005 | 20240610121212.0 | ||
| 024 | 7 | _ | |a 10.1149/1.2789295 |2 DOI |
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| 024 | 7 | _ | |a 0013-4651 |2 ISSN |
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| 041 | _ | _ | |a eng |
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| 084 | _ | _ | |2 WoS |a Electrochemistry |
| 084 | _ | _ | |2 WoS |a Materials Science, Coatings & Films |
| 100 | 1 | _ | |a Watanabe, T. |b 0 |u FZJ |0 P:(DE-Juel1)VDB50077 |
| 245 | _ | _ | |a Liquid injection ALD of Pb(Zr,Ti)Ox thin films by a combination of self-regulating component oxide processes |
| 260 | _ | _ | |a Pennington, NJ |b Electrochemical Society |c 2007 |
| 300 | _ | _ | |a G262 - G269 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 440 | _ | 0 | |a Journal of the Electrochemical Society |x 0013-4651 |0 3889 |v 154 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Quaternary Pb(Zr, Ti)O-x [PZT] films were deposited at 240 degrees C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, TiOx, and ZrOx thin films. We used water as the oxidant and two sets of precursors: Pb(C11H19O2)(2) [Pb(DPM)(2)], Zr(C11H19O2)(4) [Zr(DPM)(4)], and either Ti(OC3H7)(2) (C11H19O2)(2) [Ti(Oi - Pr)(2) (DPM)(2)] or (TiOC3H7)(4) [Ti(Oi-Pr)(4)]. These precursors were dissolved in ethylcyclohexane and separately injected into a vaporizer. The deposition rates of the metal elements were investigated as a function of the input of the solutions. We started the ALD - PZT process with Ti(Oi - Pr)(2)(DPM)(2). When the input of one solution was increased, the deposition rates of the metal elements continued to increase or fluctuate, showing a complex interdependence. A PZT film deposited on a three-dimensional (3D) structure had an inhomogeneous cation composition. The film uniformity on the 3D structure was significantly improved by substituting Ti(Oi - Pr)(2)(DPM)(2) with Ti(Oi - Pr)(4). In this ALD - PZT process, self-regulated growths were confirmed for Pb and Zr. Although the deposition rate of Ti did not saturate due to a catalytic decomposition, this study suggests that the multilayer stacking ALD process is an effective method for building up homogeneous layers of multicomponent materials on desired 3D structures. (c) 2007 The Electrochemical Society. |
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| 773 | _ | _ | |a 10.1149/1.2789295 |g Vol. 154, p. G262 - G269 |p G262 - G269 |q 154 |t Journal of the Electrochemical Society |v 154 |y 2007 |x 0013-4651 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1149/1.2789295 |
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