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000058665 0247_ $$2DOI$$a10.1002/cphc.200600781
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000058665 084__ $$2WoS$$aChemistry, Physical
000058665 084__ $$2WoS$$aPhysics, Atomic, Molecular & Chemical
000058665 1001_ $$0P:(DE-Juel1)VDB71221$$aSu, G.J.$$b0$$uFZJ
000058665 245__ $$aScanning Tunneling Microscopy and Spectroscopy Studies of w-(4'-methyl-biphenyl-4-yl) alkanthiols on Au(111)-(1x1) Electrodes
000058665 260__ $$aWeinheim$$bWiley-VCH Verl.$$c2007
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000058665 440_0 $$010582$$aChemPhysChem$$v8$$x1439-4235
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000058665 520__ $$a4-methyl-4'-(n-mercaptoalkyl)biphenyl (CH3-C6H4-C6H4-(CH2)n-SH, n=3-6, BPn) monolayers assembled on Au(111)-(1x1) in 1,3,5,-trimethylbenzene (TMB) at various temperatures are studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). High resolution STM images reveal that BP3 and BP5 form a (sqrt 3x2sqrt 3) repeating motif superimposed on a temperature-dependent Moire pattern. BP4 and BP6 adlayers are characterized by a coexisting (2sqrt 3x5sqrt 3) majority phase and a temperature-dependent (3xpsqrt 3) minority phase. Assembly at 60 degrees C or 90 degrees C leads to p=5. Compression of the adlayer was found at higher temperatures. Combined with high-resolution structure experiments, the electronic characteristics of BP3 and BP4 self-assembled monolayers (SAMs) were studied by monitoring current-distance (iT-Deltaz) and current-voltage (iT-Ebias) characteristics in TMB employing a gold STM tip|BPn|Au(111)-(1x1) configuration. The semilogarithmic (iT-Deltaz) plots yielded three linear regions in the range 10 pA<or=iT<or=20 microA, which were attributed to the different positions of the STM tip with respect to the molecular adlayer (I outside, II in contact with and/or within the adlayer, and III just before the formation of Au-Au nanocontacts). The effective decay constants kappaeff and the corresponding barrier heights phi(eff) decrease with decreasing tip-substrate distance. The iT-Ebias curves at low bias voltages are represented by the Simmons tunneling model. Based on measurements in the high current limit, the electric field strength of the dielectric breakdown was estimated to range between |0.85+/-0.05|x10(9) V m-1 and |1.5+/-0.1|x10(9) V m-1.
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000058665 65320 $$2Author$$amonolayers
000058665 65320 $$2Author$$an-(mercaptoalkyl)biphenyls
000058665 65320 $$2Author$$ascanning probe microscopy
000058665 65320 $$2Author$$aself-assembly
000058665 65320 $$2Author$$asurface chemistry
000058665 7001_ $$0P:(DE-Juel1)VDB57077$$aAguilar-Sanchez, R.$$b1$$uFZJ
000058665 7001_ $$0P:(DE-Juel1)VDB2436$$aLi, Z.$$b2$$uFZJ
000058665 7001_ $$0P:(DE-Juel1)VDB45469$$aPobelov, I.$$b3$$uFZJ
000058665 7001_ $$0P:(DE-HGF)0$$aHomberger, M.$$b4
000058665 7001_ $$0P:(DE-HGF)0$$aSimon, U.$$b5
000058665 7001_ $$0P:(DE-Juel1)VDB9859$$aWandlowski, Th.$$b6$$uFZJ
000058665 773__ $$0PERI:(DE-600)2025223-7$$a10.1002/cphc.200600781$$gVol. 8, p. 1037$$p1037$$q8<1037$$tChemPhysChem$$v8$$x1439-4235$$y2007
000058665 8567_ $$uhttp://dx.doi.org/10.1002/cphc.200600781
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