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@ARTICLE{Su:58665,
author = {Su, G.J. and Aguilar-Sanchez, R. and Li, Z. and Pobelov, I.
and Homberger, M. and Simon, U. and Wandlowski, Th.},
title = {{S}canning {T}unneling {M}icroscopy and {S}pectroscopy
{S}tudies of w-(4'-methyl-biphenyl-4-yl) alkanthiols on
{A}u(111)-(1x1) {E}lectrodes},
journal = {ChemPhysChem},
volume = {8},
issn = {1439-4235},
address = {Weinheim},
publisher = {Wiley-VCH Verl.},
reportid = {PreJuSER-58665},
pages = {1037},
year = {2007},
note = {Record converted from VDB: 12.11.2012},
abstract = {4-methyl-4'-(n-mercaptoalkyl)biphenyl
(CH3-C6H4-C6H4-(CH2)n-SH, n=3-6, BPn) monolayers assembled
on Au(111)-(1x1) in 1,3,5,-trimethylbenzene (TMB) at various
temperatures are studied by scanning tunneling microscopy
(STM) and scanning tunneling spectroscopy (STS). High
resolution STM images reveal that BP3 and BP5 form a (sqrt
3x2sqrt 3) repeating motif superimposed on a
temperature-dependent Moire pattern. BP4 and BP6 adlayers
are characterized by a coexisting (2sqrt 3x5sqrt 3) majority
phase and a temperature-dependent (3xpsqrt 3) minority
phase. Assembly at 60 degrees C or 90 degrees C leads to
p=5. Compression of the adlayer was found at higher
temperatures. Combined with high-resolution structure
experiments, the electronic characteristics of BP3 and BP4
self-assembled monolayers (SAMs) were studied by monitoring
current-distance (iT-Deltaz) and current-voltage (iT-Ebias)
characteristics in TMB employing a gold STM
tip|BPn|Au(111)-(1x1) configuration. The semilogarithmic
(iT-Deltaz) plots yielded three linear regions in the range
10 pA<or=iT<or=20 microA, which were attributed to the
different positions of the STM tip with respect to the
molecular adlayer (I outside, II in contact with and/or
within the adlayer, and III just before the formation of
Au-Au nanocontacts). The effective decay constants kappaeff
and the corresponding barrier heights phi(eff) decrease with
decreasing tip-substrate distance. The iT-Ebias curves at
low bias voltages are represented by the Simmons tunneling
model. Based on measurements in the high current limit, the
electric field strength of the dielectric breakdown was
estimated to range between |0.85+/-0.05|x10(9) V m-1 and
|1.5+/-0.1|x10(9) V m-1.},
keywords = {J (WoSType)},
cin = {IBN-3 / CNI / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)VDB801 / I:(DE-Juel1)VDB381 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Chemistry, Physical / Physics, Atomic, Molecular $\&$
Chemical},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:17476662},
UT = {WOS:000246646900010},
doi = {10.1002/cphc.200600781},
url = {https://juser.fz-juelich.de/record/58665},
}