%0 Journal Article
%A Paul, N.
%A Filimonov, S.
%A Cherepanov, V.
%A Cakmak, M.
%A Voigtländer, B.
%T Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface
%J Physical review letters
%V 98
%@ 0031-9007
%C College Park, Md.
%I APS
%M PreJuSER-58702
%P 166104
%D 2007
%Z Record converted from VDB: 12.11.2012
%X The chemical contrast between Si and Ge obtained by scanning tunneling microscopy on Bi-covered Si(111) surfaces is used as a tool to identify two vertical Ge/Si intermixing processes. During annealing of an initially pure Ge monolayer on Si, the intermixing is confined to the first two layers approaching a 50% Ge concentration in each layer. During epitaxial growth, a growth front induced intermixing process acting at step edges is observed. Because of the open atomic structure at the step edges, relative to the terraces, a lower activation barrier for intermixing at the step edge, compared to the terrace, is observed.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000245871200041
%R 10.1103/PhysRevLett.98.166104
%U https://juser.fz-juelich.de/record/58702