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000058702 1001_ $$0P:(DE-Juel1)VDB1226$$aPaul, N.$$b0$$uFZJ
000058702 245__ $$aIdentification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface
000058702 260__ $$aCollege Park, Md.$$bAPS$$c2007
000058702 300__ $$a166104
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000058702 520__ $$aThe chemical contrast between Si and Ge obtained by scanning tunneling microscopy on Bi-covered Si(111) surfaces is used as a tool to identify two vertical Ge/Si intermixing processes. During annealing of an initially pure Ge monolayer on Si, the intermixing is confined to the first two layers approaching a 50% Ge concentration in each layer. During epitaxial growth, a growth front induced intermixing process acting at step edges is observed. Because of the open atomic structure at the step edges, relative to the terraces, a lower activation barrier for intermixing at the step edge, compared to the terrace, is observed.
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000058702 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevLett.98.166104
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