TY  - JOUR
AU  - Paul, N.
AU  - Filimonov, S.
AU  - Cherepanov, V.
AU  - Cakmak, M.
AU  - Voigtländer, B.
TI  - Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface
JO  - Physical review letters
VL  - 98
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-58702
SP  - 166104
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - The chemical contrast between Si and Ge obtained by scanning tunneling microscopy on Bi-covered Si(111) surfaces is used as a tool to identify two vertical Ge/Si intermixing processes. During annealing of an initially pure Ge monolayer on Si, the intermixing is confined to the first two layers approaching a 50% Ge concentration in each layer. During epitaxial growth, a growth front induced intermixing process acting at step edges is observed. Because of the open atomic structure at the step edges, relative to the terraces, a lower activation barrier for intermixing at the step edge, compared to the terrace, is observed.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000245871200041
DO  - DOI:10.1103/PhysRevLett.98.166104
UR  - https://juser.fz-juelich.de/record/58702
ER  -