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@ARTICLE{Paul:58702,
author = {Paul, N. and Filimonov, S. and Cherepanov, V. and Cakmak,
M. and Voigtländer, B.},
title = {{I}dentification of {G}e/{S}i intermixing processes at the
{B}i/{G}e/{S}i(111) surface},
journal = {Physical review letters},
volume = {98},
issn = {0031-9007},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-58702},
pages = {166104},
year = {2007},
note = {Record converted from VDB: 12.11.2012},
abstract = {The chemical contrast between Si and Ge obtained by
scanning tunneling microscopy on Bi-covered Si(111) surfaces
is used as a tool to identify two vertical Ge/Si intermixing
processes. During annealing of an initially pure Ge
monolayer on Si, the intermixing is confined to the first
two layers approaching a $50\%$ Ge concentration in each
layer. During epitaxial growth, a growth front induced
intermixing process acting at step edges is observed.
Because of the open atomic structure at the step edges,
relative to the terraces, a lower activation barrier for
intermixing at the step edge, compared to the terrace, is
observed.},
keywords = {J (WoSType)},
cin = {IBN-3 / CNI / JARA-FIT},
ddc = {550},
cid = {I:(DE-Juel1)VDB801 / I:(DE-Juel1)VDB381 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Multidisciplinary},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000245871200041},
doi = {10.1103/PhysRevLett.98.166104},
url = {https://juser.fz-juelich.de/record/58702},
}