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001     58702
005     20200423204530.0
024 7 _ |a 10.1103/PhysRevLett.98.166104
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024 7 _ |a 2128/7736
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037 _ _ |a PreJuSER-58702
041 _ _ |a eng
082 _ _ |a 550
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|a Physics, Multidisciplinary
100 1 _ |a Paul, N.
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245 _ _ |a Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface
260 _ _ |a College Park, Md.
|b APS
|c 2007
300 _ _ |a 166104
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|v 98
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The chemical contrast between Si and Ge obtained by scanning tunneling microscopy on Bi-covered Si(111) surfaces is used as a tool to identify two vertical Ge/Si intermixing processes. During annealing of an initially pure Ge monolayer on Si, the intermixing is confined to the first two layers approaching a 50% Ge concentration in each layer. During epitaxial growth, a growth front induced intermixing process acting at step edges is observed. Because of the open atomic structure at the step edges, relative to the terraces, a lower activation barrier for intermixing at the step edge, compared to the terrace, is observed.
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700 1 _ |a Filimonov, S.
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700 1 _ |a Cherepanov, V.
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700 1 _ |a Cakmak, M.
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700 1 _ |a Voigtländer, B.
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773 _ _ |a 10.1103/PhysRevLett.98.166104
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|t Physical review letters
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.98.166104
856 4 _ |u https://juser.fz-juelich.de/record/58702/files/FZJ-58702.pdf
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920 1 _ |d 31.12.2010
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