%0 Journal Article
%A Romanyuk, K.
%A Myslivecek, J.
%A Cherepanov, V.
%A Sekiguchi, T.
%A Yoshida, S.
%A Itoh, K. M.
%A Voigtländer, B.
%T Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy
%J Physical review / B
%V 75
%N 24
%@ 1098-0121
%C College Park, Md.
%I APS
%M PreJuSER-58703
%P 241309
%D 2007
%Z Record converted from VDB: 12.11.2012
%X We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 mu m at a width of approximate to 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000247625000016
%R 10.1103/PhysRevB.75.241309
%U https://juser.fz-juelich.de/record/58703