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000058703 084__ $$2WoS$$aPhysics, Condensed Matter
000058703 1001_ $$0P:(DE-Juel1)VDB71268$$aRomanyuk, K.$$b0$$uFZJ
000058703 245__ $$aOptimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy
000058703 260__ $$aCollege Park, Md.$$bAPS$$c2007
000058703 300__ $$a241309
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000058703 520__ $$aWe demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 mu m at a width of approximate to 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.
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000058703 7001_ $$0P:(DE-Juel1)VDB9864$$aMyslivecek, J.$$b1$$uFZJ
000058703 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b2$$uFZJ
000058703 7001_ $$0P:(DE-HGF)0$$aSekiguchi, T.$$b3
000058703 7001_ $$0P:(DE-HGF)0$$aYoshida, S.$$b4
000058703 7001_ $$0P:(DE-HGF)0$$aItoh, K. M.$$b5
000058703 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b6$$uFZJ
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000058703 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevB.75.241309
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