TY  - JOUR
AU  - Romanyuk, K.
AU  - Myslivecek, J.
AU  - Cherepanov, V.
AU  - Sekiguchi, T.
AU  - Yoshida, S.
AU  - Itoh, K. M.
AU  - Voigtländer, B.
TI  - Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy
JO  - Physical review / B
VL  - 75
IS  - 24
SN  - 1098-0121
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-58703
SP  - 241309
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 mu m at a width of approximate to 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000247625000016
DO  - DOI:10.1103/PhysRevB.75.241309
UR  - https://juser.fz-juelich.de/record/58703
ER  -