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@ARTICLE{Romanyuk:58703,
author = {Romanyuk, K. and Myslivecek, J. and Cherepanov, V. and
Sekiguchi, T. and Yoshida, S. and Itoh, K. M. and
Voigtländer, B.},
title = {{O}ptimized {G}e nanowire arrays on {S}i by modified
surfactant mediated epitaxy},
journal = {Physical review / B},
volume = {75},
number = {24},
issn = {1098-0121},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-58703},
pages = {241309},
year = {2007},
note = {Record converted from VDB: 12.11.2012},
abstract = {We demonstrate the formation of Ge nanowire arrays on
highly ordered kink-free Si stepped surfaces. The nanowires
are grown using Bi surfactant mediated epitaxy. The
nanowires are single crystalline and feature minimal kink
densities, allowing them to span lengths larger than 1 mu m
at a width of approximate to 4 nm. To achieve desired growth
conditions for the formation of such nanowire arrays, we
explore a full parameter space of surfactant mediated
epitaxy. We show that controlling the surfactant coverage in
the surface and/or at step edges modifies the growth
properties of surface steps in a decisive way.},
keywords = {J (WoSType)},
cin = {IBN-3 / CNI / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB801 / I:(DE-Juel1)VDB381 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000247625000016},
doi = {10.1103/PhysRevB.75.241309},
url = {https://juser.fz-juelich.de/record/58703},
}