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| 001 | 58703 | ||
| 005 | 20230426083231.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevB.75.241309 |2 DOI |
| 024 | 7 | _ | |a WOS:000247625000016 |2 WOS |
| 024 | 7 | _ | |a 2128/7737 |2 Handle |
| 037 | _ | _ | |a PreJuSER-58703 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Romanyuk, K. |b 0 |u FZJ |0 P:(DE-Juel1)VDB71268 |
| 245 | _ | _ | |a Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy |
| 260 | _ | _ | |a College Park, Md. |b APS |c 2007 |
| 300 | _ | _ | |a 241309 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Physical Review B |x 1098-0121 |0 4919 |v 75 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 mu m at a width of approximate to 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 542 | _ | _ | |i 2007-06-29 |2 Crossref |u http://link.aps.org/licenses/aps-default-license |
| 588 | _ | _ | |a Dataset connected to Web of Science |
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| 700 | 1 | _ | |a Myslivecek, J. |b 1 |u FZJ |0 P:(DE-Juel1)VDB9864 |
| 700 | 1 | _ | |a Cherepanov, V. |b 2 |u FZJ |0 P:(DE-Juel1)VDB10516 |
| 700 | 1 | _ | |a Sekiguchi, T. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Yoshida, S. |b 4 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Itoh, K. M. |b 5 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Voigtländer, B. |b 6 |u FZJ |0 P:(DE-Juel1)VDB5601 |
| 773 | 1 | 8 | |a 10.1103/physrevb.75.241309 |b American Physical Society (APS) |d 2007-06-29 |n 24 |p 241309 |3 journal-article |2 Crossref |t Physical Review B |v 75 |y 2007 |x 1098-0121 |
| 773 | _ | _ | |a 10.1103/PhysRevB.75.241309 |g Vol. 75, p. 241309 |p 241309 |n 24 |q 75<241309 |0 PERI:(DE-600)2844160-6 |t Physical review / B |v 75 |y 2007 |x 1098-0121 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1103/PhysRevB.75.241309 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/58703/files/FZJ-58703.pdf |y OpenAccess |z Published final document. |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/58703/files/FZJ-58703.jpg?subformat=icon-1440 |x icon-1440 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/58703/files/FZJ-58703.jpg?subformat=icon-180 |x icon-180 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/58703/files/FZJ-58703.jpg?subformat=icon-640 |x icon-640 |y OpenAccess |
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| 914 | 1 | _ | |y 2007 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
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| 915 | _ | _ | |0 LIC:(DE-HGF)APS-112012 |a American Physical Society Transfer of Copyright Ag |2 HGFVOC |
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| 920 | 1 | _ | |d 14.09.2008 |g CNI |k CNI |l Center of Nanoelectronic Systems for Information Technology |0 I:(DE-Juel1)VDB381 |x 1 |z 381 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 2 |
| 970 | _ | _ | |a VDB:(DE-Juel1)92492 |
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| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
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