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@ARTICLE{Sekiguchi:58705,
      author       = {Sekiguchi, T. and Yoshida, S. and Shiren, Y. and Itoh, K.
                      M. and Myslivecek, J.},
      title        = {{S}elf-assembly of periodic nanoclusters of {S}i and {G}e
                      along atomically straight steps of a vicinal {S}i(111)},
      journal      = {Journal of applied physics},
      volume       = {101},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-58705},
      pages        = {081702},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The very initial stage of the molecular beam epitaxy of Si
                      and Ge on Si(111)-7x7 substrates with atomically straight
                      steps has been studied by scanning tunneling microscopy and
                      spectroscopy. The atomically straight steps have been
                      prepared on a miscut Si(111) substrate by annealing at 830
                      degrees C with kink-up direct current. The length of the
                      steps can be maximized by selecting a proper annealing time.
                      The steps have a well-defined U(2, 0) step-edge structure.
                      The growth of both Si and Ge at temperatures between 250 and
                      400 degrees C starts with formation of a single-adatom-row
                      nanowire (0.67 nm in width) along the lower edge of each
                      U(2, 0) step. Subsequent growth of Si and Ge at temperatures
                      between 250 and 300 degrees C results in formation of
                      one-dimensional arrays of nanoclusters (less than 2.0 nm in
                      width) in the unfaulted halves of the 7x7 structure along
                      the upper step edges. Scanning tunneling spectroscopy
                      reveals localized electronic states of the nanoclusters.
                      Differences between the growth of Si and Ge nanoclusters are
                      discussed.},
      keywords     = {J (WoSType)},
      cin          = {IBN-3 / CNI / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB801 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000246072200005},
      doi          = {10.1063/1.2722726},
      url          = {https://juser.fz-juelich.de/record/58705},
}