000058706 001__ 58706
000058706 005__ 20230426083241.0
000058706 0247_ $$2DOI$$a10.1103/PhysRevB.76.035428
000058706 0247_ $$2WOS$$aWOS:000248500800148
000058706 0247_ $$2Handle$$a2128/7738
000058706 037__ $$aPreJuSER-58706
000058706 041__ $$aeng
000058706 082__ $$a530
000058706 084__ $$2WoS$$aPhysics, Condensed Matter
000058706 1001_ $$0P:(DE-Juel1)VDB26536$$aFilimonov, S.$$b0$$uFZJ
000058706 245__ $$aMultistage nucleation of two-dimensional Si islands on Si(111)-7x7 during MBE growth: STM experiments and extended rate-equation model
000058706 260__ $$aCollege Park, Md.$$bAPS$$c2007
000058706 300__ $$a035428
000058706 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000058706 3367_ $$2DataCite$$aOutput Types/Journal article
000058706 3367_ $$00$$2EndNote$$aJournal Article
000058706 3367_ $$2BibTeX$$aARTICLE
000058706 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000058706 3367_ $$2DRIVER$$aarticle
000058706 440_0 $$04919$$aPhysical Review B$$v76$$x1098-0121
000058706 500__ $$aRecord converted from VDB: 12.11.2012
000058706 520__ $$aThe submonolayer density of two-dimensional (2D) islands in Si/Si(111)-7x7 molecular beam epitaxy is measured using scanning tunneling microscopy. At a relatively low deposition temperature of 673 K, the density of 2D islands is a power function of the deposition flux N-2D proportional to F-chi with the exponent chi=0.24 being smaller than that predicted by the standard nucleation theory. The nonstandard scaling of the 2D island density is explained by the multistage character of the nucleation process on the Si(111)-7x7 surface which involves consecutive stages of formation of stable Si clusters, formation of pairs of clusters, and transformation of the cluster pairs to 2D islands. Using an extended rate-equation model, we analyze the temperature and growth rate dependencies of the density of single clusters, cluster pairs, and 2D islands and show that an activation barrier of similar to 1.26 eV delays the transformation of cluster pairs to 2D islands. The delayed transformation of cluster pairs to 2D islands is the reason for the nonstandard scaling of the 2D island density observed at low deposition temperatures.
000058706 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000058706 542__ $$2Crossref$$i2007-07-23$$uhttp://link.aps.org/licenses/aps-default-license
000058706 588__ $$aDataset connected to Web of Science
000058706 650_7 $$2WoSType$$aJ
000058706 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b1$$uFZJ
000058706 7001_ $$0P:(DE-HGF)0$$aHervieu, Y.$$b2
000058706 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b3$$uFZJ
000058706 77318 $$2Crossref$$3journal-article$$a10.1103/physrevb.76.035428$$bAmerican Physical Society (APS)$$d2007-07-23$$n3$$p035428$$tPhysical Review B$$v76$$x1098-0121$$y2007
000058706 773__ $$0PERI:(DE-600)2844160-6$$a10.1103/PhysRevB.76.035428$$gVol. 76, p. 035428$$n3$$p035428$$q76<035428$$tPhysical review / B$$v76$$x1098-0121$$y2007
000058706 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevB.76.035428
000058706 8564_ $$uhttps://juser.fz-juelich.de/record/58706/files/FZJ-58706.pdf$$yOpenAccess$$zPublished final document.
000058706 8564_ $$uhttps://juser.fz-juelich.de/record/58706/files/FZJ-58706.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000058706 8564_ $$uhttps://juser.fz-juelich.de/record/58706/files/FZJ-58706.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000058706 8564_ $$uhttps://juser.fz-juelich.de/record/58706/files/FZJ-58706.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000058706 909CO $$ooai:juser.fz-juelich.de:58706$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000058706 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000058706 9141_ $$y2007
000058706 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000058706 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000058706 915__ $$0LIC:(DE-HGF)APS-112012$$2HGFVOC$$aAmerican Physical Society Transfer of Copyright Ag
000058706 9201_ $$0I:(DE-Juel1)VDB801$$d31.12.2010$$gIBN$$kIBN-3$$lGrenz- und Oberflächen$$x0
000058706 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000058706 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
000058706 970__ $$aVDB:(DE-Juel1)92495
000058706 9801_ $$aFullTexts
000058706 980__ $$aVDB
000058706 980__ $$aConvertedRecord
000058706 980__ $$ajournal
000058706 980__ $$aI:(DE-Juel1)PGI-3-20110106
000058706 980__ $$aI:(DE-Juel1)VDB381
000058706 980__ $$aI:(DE-82)080009_20140620
000058706 980__ $$aUNRESTRICTED
000058706 980__ $$aJUWEL
000058706 980__ $$aFullTexts
000058706 981__ $$aI:(DE-Juel1)PGI-3-20110106
000058706 981__ $$aI:(DE-Juel1)VDB381
000058706 981__ $$aI:(DE-Juel1)VDB881
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