%0 Journal Article
%A Romanyuk, K.
%A Cherepanov, V.
%A Voigtländer, B.
%T Symmetry breaking in the growth of two-dimensional islands on Si(111)
%J Physical review letters
%V 99
%@ 0031-9007
%C College Park, Md.
%I APS
%M PreJuSER-58708
%P 126103
%D 2007
%Z Record converted from VDB: 12.11.2012
%X We find that the shape of two-dimensional (2D) Si or Ge islands has a lower symmetry than the threefold symmetry of the underlying Si(111) substrate if Bi is used as a surfactant during growth. Arrow-shaped or rhomb-shaped 2D islands are observed by scanning tunneling microscopy. This symmetry breaking is explained by a mutual shift between the surface reconstructions present on the substrate and on the islands. Using the kinematic Wulff construction the growth velocities of the steps could be determined from the island shape if the nucleation center has been located by a marker technique.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000249668000048
%R 10.1103/PhysRevLett.99.126103
%U https://juser.fz-juelich.de/record/58708