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000058708 1001_ $$0P:(DE-Juel1)VDB71268$$aRomanyuk, K.$$b0$$uFZJ
000058708 245__ $$aSymmetry breaking in the growth of two-dimensional islands on Si(111)
000058708 260__ $$aCollege Park, Md.$$bAPS$$c2007
000058708 300__ $$a126103
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000058708 440_0 $$04925$$aPhysical Review Letters$$v99$$x0031-9007
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000058708 520__ $$aWe find that the shape of two-dimensional (2D) Si or Ge islands has a lower symmetry than the threefold symmetry of the underlying Si(111) substrate if Bi is used as a surfactant during growth. Arrow-shaped or rhomb-shaped 2D islands are observed by scanning tunneling microscopy. This symmetry breaking is explained by a mutual shift between the surface reconstructions present on the substrate and on the islands. Using the kinematic Wulff construction the growth velocities of the steps could be determined from the island shape if the nucleation center has been located by a marker technique.
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000058708 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b1$$uFZJ
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