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001     58708
005     20200423204530.0
024 7 _ |a 10.1103/PhysRevLett.99.126103
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024 7 _ |a 2128/7739
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037 _ _ |a PreJuSER-58708
041 _ _ |a eng
082 _ _ |a 550
084 _ _ |2 WoS
|a Physics, Multidisciplinary
100 1 _ |a Romanyuk, K.
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245 _ _ |a Symmetry breaking in the growth of two-dimensional islands on Si(111)
260 _ _ |a College Park, Md.
|b APS
|c 2007
300 _ _ |a 126103
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|v 99
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We find that the shape of two-dimensional (2D) Si or Ge islands has a lower symmetry than the threefold symmetry of the underlying Si(111) substrate if Bi is used as a surfactant during growth. Arrow-shaped or rhomb-shaped 2D islands are observed by scanning tunneling microscopy. This symmetry breaking is explained by a mutual shift between the surface reconstructions present on the substrate and on the islands. Using the kinematic Wulff construction the growth velocities of the steps could be determined from the island shape if the nucleation center has been located by a marker technique.
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700 1 _ |a Cherepanov, V.
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700 1 _ |a Voigtländer, B.
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773 _ _ |a 10.1103/PhysRevLett.99.126103
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.99.126103
856 4 _ |u https://juser.fz-juelich.de/record/58708/files/FZJ-58708.pdf
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920 1 _ |d 31.12.2010
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