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000059028 084__ $$2WoS$$aElectrochemistry
000059028 084__ $$2WoS$$aMaterials Science, Coatings & Films
000059028 1001_ $$0P:(DE-Juel1)VDB35139$$aThomas, R.$$b0$$uFZJ
000059028 245__ $$aThin Films of HfO2 for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors
000059028 260__ $$aPennington, NJ$$bElectrochemical Society$$c2007
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000059028 520__ $$aHfO2 thin films with thickness between 2 and 20 nm were grown by liquid injection metallorganic chemical vapor deposition, LI-MOCVD, on SiOx/Si (100) substrates. Different mononuclear precursors ([Hf(OPri)(2)(tbaoac)(2)], [Hf(NEt2)(2)(guanid)(2)], and [Hf(OBut)(2)(dmae)(2)] were tested in combination with different solvents. Growth rate, surface morphology, crystal structure, and crystal density of the as-deposited films were analyzed as a function of deposition temperature. The influence of postdeposition annealing on the densification and crystallization was studied. Correlation of the structural properties with the electrical properties of metal insulator semiconductor capacitors with Pt top electrodes is discussed. Fully silicided metal gate stacks are additionally discussed for selected samples. (c) 2007 The Electrochemical Society.
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000059028 7001_ $$0P:(DE-HGF)0$$aMilanov, A.$$b3
000059028 7001_ $$0P:(DE-HGF)0$$aBhakta, R.$$b4
000059028 7001_ $$0P:(DE-HGF)0$$aBaunemann, A.$$b5
000059028 7001_ $$0P:(DE-HGF)0$$aDevi, A.$$b6
000059028 7001_ $$0P:(DE-HGF)0$$aFischer, R.$$b7
000059028 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b8$$uFZJ
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000059028 8567_ $$uhttp://dx.doi.org/10.1149/1.2431324
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