TY  - JOUR
AU  - Thomas, R.
AU  - Rije, E.
AU  - Ehrhart, P.
AU  - Milanov, A.
AU  - Bhakta, R.
AU  - Baunemann, A.
AU  - Devi, A.
AU  - Fischer, R.
AU  - Waser, R.
TI  - Thin Films of HfO2 for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors
JO  - Journal of the Electrochemical Society
VL  - 154
SN  - 0013-4651
CY  - Pennington, NJ
PB  - Electrochemical Society
M1  - PreJuSER-59028
SP  - G77 - G84
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - HfO2 thin films with thickness between 2 and 20 nm were grown by liquid injection metallorganic chemical vapor deposition, LI-MOCVD, on SiOx/Si (100) substrates. Different mononuclear precursors ([Hf(OPri)(2)(tbaoac)(2)], [Hf(NEt2)(2)(guanid)(2)], and [Hf(OBut)(2)(dmae)(2)] were tested in combination with different solvents. Growth rate, surface morphology, crystal structure, and crystal density of the as-deposited films were analyzed as a function of deposition temperature. The influence of postdeposition annealing on the densification and crystallization was studied. Correlation of the structural properties with the electrical properties of metal insulator semiconductor capacitors with Pt top electrodes is discussed. Fully silicided metal gate stacks are additionally discussed for selected samples. (c) 2007 The Electrochemical Society.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000243977500056
DO  - DOI:10.1149/1.2431324
UR  - https://juser.fz-juelich.de/record/59028
ER  -