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@ARTICLE{Thomas:59028,
      author       = {Thomas, R. and Rije, E. and Ehrhart, P. and Milanov, A. and
                      Bhakta, R. and Baunemann, A. and Devi, A. and Fischer, R.
                      and Waser, R.},
      title        = {{T}hin {F}ilms of {H}f{O}2 for {H}igh-k {G}ate {O}xide
                      {A}pplications from {E}ngineered {A}lkoxide- and
                      {A}mide-{B}ased {MOCVD} {P}recursors},
      journal      = {Journal of the Electrochemical Society},
      volume       = {154},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-59028},
      pages        = {G77 - G84},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {HfO2 thin films with thickness between 2 and 20 nm were
                      grown by liquid injection metallorganic chemical vapor
                      deposition, LI-MOCVD, on SiOx/Si (100) substrates. Different
                      mononuclear precursors ([Hf(OPri)(2)(tbaoac)(2)],
                      [Hf(NEt2)(2)(guanid)(2)], and [Hf(OBut)(2)(dmae)(2)] were
                      tested in combination with different solvents. Growth rate,
                      surface morphology, crystal structure, and crystal density
                      of the as-deposited films were analyzed as a function of
                      deposition temperature. The influence of postdeposition
                      annealing on the densification and crystallization was
                      studied. Correlation of the structural properties with the
                      electrical properties of metal insulator semiconductor
                      capacitors with Pt top electrodes is discussed. Fully
                      silicided metal gate stacks are additionally discussed for
                      selected samples. (c) 2007 The Electrochemical Society.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / IBN-1 / JARA-ENERGY / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB799 /
                      $I:(DE-82)080011_20140620$ / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000243977500056},
      doi          = {10.1149/1.2431324},
      url          = {https://juser.fz-juelich.de/record/59028},
}