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024 7 _ |a 10.1103/PhysRevB.80.020201
|2 DOI
024 7 _ |a WOS:000268617500002
|2 WOS
024 7 _ |a 2128/11029
|2 Handle
037 _ _ |a PreJuSER-5915
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Akola, J.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change material Ge2Sb2Te5
260 _ _ |a College Park, Md.
|b APS
|c 2009
300 _ _ |a 020201
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physical Review B
|x 1098-0121
|0 4919
|y 2
|v 80
500 _ _ |a The experimental work was supported by the Japan Science and Technology Agency, and the calculations were performed on IBM BlueGene/L, BlueGene/P, and p690 computers in the Forschungszentrum Julich with grants from the FZ Julich and the John von Neumann Institute for Computing. R.O.J. thanks SPring-8 and its staff for hospitality and support during a research visit.
520 _ _ |a Phase change materials involve the rapid and reversible transition between nanoscale amorphous (a-) and crystalline (c-) spots in a polycrystalline film and play major roles in the multimedia world, including nonvolatile computer memory. The materials of choice are alloys of Ge, Sb, and Te, e.g., Ge2Sb2Te5 (GST) in digital versatile disk-random access memory. There has been much speculation about the structure of a- GST, but no model has yet received general acceptance. Here we optimize the structure by combining the results of density-functional calculations with high-energy x-ray diffraction data and x-ray photoelectron spectroscopy (XPS) measurements of the electronic densities of states to determine the structure. The structure agrees very well with available experimental data, including the differences in the XPS data between the amorphous and crystalline structures.
536 _ _ |a Kondensierte Materie
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542 _ _ |i 2009-07-07
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
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653 2 0 |2 Author
|a amorphous state
653 2 0 |2 Author
|a antimony alloys
653 2 0 |2 Author
|a crystallisation
653 2 0 |2 Author
|a density functional theory
653 2 0 |2 Author
|a electronic density of states
653 2 0 |2 Author
|a germanium alloys
653 2 0 |2 Author
|a metallic thin films
653 2 0 |2 Author
|a phase change materials
653 2 0 |2 Author
|a random-access storage
653 2 0 |2 Author
|a tellurium alloys
653 2 0 |2 Author
|a X-ray diffraction
653 2 0 |2 Author
|a X-ray photoelectron spectra
700 1 _ |a Jones, R. O.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB60912
773 1 8 |a 10.1103/physrevb.80.020201
|b American Physical Society (APS)
|d 2009-07-07
|n 2
|p 020201
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|t Physical Review B
|v 80
|y 2009
|x 1098-0121
773 _ _ |a 10.1103/PhysRevB.80.020201
|g Vol. 80, p. 020201
|p 020201
|n 2
|q 80<020201
|0 PERI:(DE-600)2844160-6
|t Physical review / B
|v 80
|y 2009
|x 1098-0121
856 7 _ |u http://dx.doi.org/10.1103/PhysRevB.80.020201
856 4 _ |u https://juser.fz-juelich.de/record/5915/files/PhysRevB.80.020201.pdf
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999 C 5 |1 O. Gereben
|y 2007
|2 Crossref
|o O. Gereben 2007
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