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@ARTICLE{Emtsev:59152,
      author       = {Emtsev, V. V. and Ehrhart, P. and Poloskin, D. S. and
                      Emtsev, K. V.},
      title        = {{C}omparative studies of defect production in heavily doped
                      silicon under fast electron irradiation at different
                      temperatures},
      journal      = {Journal of materials science / Materials in electronics},
      volume       = {18},
      issn         = {0957-4522},
      address      = {Dordrecht [u.a.]},
      publisher    = {Springer Science + Business Media B.V},
      reportid     = {PreJuSER-59152},
      pages        = {711 - 714},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Production processes of electrically active defects in
                      degenerate silicon subjected to 2.5 MeV electron irradiation
                      at T = 4.2 K and T = 300 K have been studied. The production
                      rates of primary and secondary defects in irradiated samples
                      are analyzed on the basis of the known properties of
                      radiation-produced defects in Si. It has been demonstrated
                      that a striking difference in the production rates of
                      electrically active defects in n- and p-Si under irradiation
                      at cryogenic temperatures may be related to the different
                      fate of Frenkel pairs in both materials. The production rate
                      of primary defects in degenerate Si was found to be between
                      1.5 cm(-1) and 2 cm(-1).},
      keywords     = {J (WoSType)},
      cin          = {IFF-6},
      ddc          = {600},
      cid          = {I:(DE-Juel1)VDB786},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Materials
                      Science, Multidisciplinary / Physics, Applied / Physics,
                      Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000246175200007},
      doi          = {10.1007/s10854-006-9103-6},
      url          = {https://juser.fz-juelich.de/record/59152},
}