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@ARTICLE{Devi:59161,
      author       = {Devi, A. and Bhakta, R. and Milanov, A. and Hellwig, M. and
                      Barreca, D. and Tondello, E. and Thomas, R. and Ehrhart, P.
                      and Winter, M. and Fischer, R.},
      title        = {{S}ynthesis and characterisation of zirconium–amido
                      guanidinato complex: a potential precursor for {Z}r{O}2 thin
                      films},
      journal      = {Dalton transactions},
      volume       = {17},
      issn         = {1477-9226},
      address      = {London},
      publisher    = {Soc.},
      reportid     = {PreJuSER-59161},
      pages        = {1671 - 1676},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A new zirconium complex,
                      bis-(ethylmethylamido)-bis-(N,N'-diisopropyl-2-ethylmethylamidoguanidinato)-zirconium(iv)
                      {[(N(i)Pr)(2)C(NEtMe)](2)Zr(NEtMe)(2)}, was synthesised by
                      partial replacement of amide ligands with bidentate
                      guanidinate ligands. The monomeric Zr complex was
                      characterised by (1)H-NMR, (13)C-NMR, EI-MS, elemental
                      analysis, and single crystal X-ray diffraction studies. The
                      thermal properties of the compound was studied by
                      thermogravimetric and differential thermal analysis
                      (TG/DTA). The new Zr compound is thermally stable and can be
                      sublimed quantitatively which renders it promising for thin
                      film growth using vapor deposition techniques like chemical
                      vapor deposition (CVD) and atomic layer deposition (ALD).
                      The use of this complex for CVD of ZrO(2) on Si(100)
                      substrates was attempted in combination with oxygen as the
                      oxidant. Stoichiometric ZrO(2) films with preferred
                      orientation at lower growth temperatures was obtained and
                      the films were almost carbon free. The preliminary
                      electrical characterisation of ZrO(2) films showed
                      encouraging results for possible applications in dielectric
                      oxide structures.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Chemistry, Inorganic $\&$ Nuclear},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:17443259},
      UT           = {WOS:000245815000005},
      doi          = {10.1039/b616861b},
      url          = {https://juser.fz-juelich.de/record/59161},
}