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000059214 084__ $$2WoS$$aElectrochemistry
000059214 084__ $$2WoS$$aMaterials Science, Coatings & Films
000059214 1001_ $$0P:(DE-Juel1)VDB50077$$aWatanabe, T.$$b0$$uFZJ
000059214 245__ $$aLiquid Injection Atomic Layer Deposition of TiOx Films Using Ti[OCH(CH3)2]4
000059214 260__ $$aPennington, NJ$$bElectrochemical Society$$c2007
000059214 300__ $$aG134 - G140
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000059214 440_0 $$03889$$aJournal of the Electrochemical Society$$v154$$x0013-4651
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000059214 520__ $$aTiOx films were prepared by liquid injection atomic layer deposition using titanium tetraisopropoxide (TTIP), Ti[OCH(CH3)(2)](4), dissolved in ethylcyclohexane (ECH). We analyzed the residual water content and the reaction with the TTIP for several solvents, choosing ECH for dissolving the TTIP because of the lowest residual water level and no ligand exchange reaction with the TTIP. TiOx films were deposited at 240 degrees C with a wide range of the TTIP solution injections per cycle. However, an ideal self-regulated growth was not achieved for the TiOx films due to a slow catalytic decomposition of the TTIP molecules followed by the exchange reaction with the underling layer. The contribution of the catalytic decompositions to the deposition rates was suppressed by increasing the injection frequency of the TTIP solution into the vaporizer. A rather independent deposition rate of the input of the TTIP solution was achieved by increasing the injection frequency to 4 Hz, while TiOx films deposited with a low injection frequency of 0.25 Hz showed almost linear film growth rate to the input of the TTIP solution. The deposited TiOx films were amorphous and clearly showed both unipolar and bipolar resistive switching behaviors, which are applicable to nonvolatile memory applications. (c) 2007 The Electrochemical Society.
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000059214 7001_ $$0P:(DE-Juel1)VDB3102$$aHoffmann-Eifert, S.$$b1$$uFZJ
000059214 7001_ $$0P:(DE-Juel1)VDB61379$$aYang, L.$$b2$$uFZJ
000059214 7001_ $$0P:(DE-Juel1)VDB26957$$aRüdiger, A.$$b3$$uFZJ
000059214 7001_ $$0P:(DE-Juel1)VDB15125$$aKügeler, C.$$b4$$uFZJ
000059214 7001_ $$0P:(DE-HGF)0$$aHwang, C. S.$$b5
000059214 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6$$uFZJ
000059214 773__ $$0PERI:(DE-600)2002179-3$$a10.1149/1.2724126$$gVol. 154, p. G134 - G140$$pG134 - G140$$q154<G134 - G140$$tJournal of the Electrochemical Society$$v154$$x0013-4651$$y2007
000059214 8567_ $$uhttp://dx.doi.org/10.1149/1.2724126
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000059214 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x1
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