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@ARTICLE{Watanabe:59214,
      author       = {Watanabe, T. and Hoffmann-Eifert, S. and Yang, L. and
                      Rüdiger, A. and Kügeler, C. and Hwang, C. S. and Waser,
                      R.},
      title        = {{L}iquid {I}njection {A}tomic {L}ayer {D}eposition of
                      {T}i{O}x {F}ilms {U}sing {T}i[{OCH}({CH}3)2]4},
      journal      = {Journal of the Electrochemical Society},
      volume       = {154},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-59214},
      pages        = {G134 - G140},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {TiOx films were prepared by liquid injection atomic layer
                      deposition using titanium tetraisopropoxide (TTIP),
                      Ti[OCH(CH3)(2)](4), dissolved in ethylcyclohexane (ECH). We
                      analyzed the residual water content and the reaction with
                      the TTIP for several solvents, choosing ECH for dissolving
                      the TTIP because of the lowest residual water level and no
                      ligand exchange reaction with the TTIP. TiOx films were
                      deposited at 240 degrees C with a wide range of the TTIP
                      solution injections per cycle. However, an ideal
                      self-regulated growth was not achieved for the TiOx films
                      due to a slow catalytic decomposition of the TTIP molecules
                      followed by the exchange reaction with the underling layer.
                      The contribution of the catalytic decompositions to the
                      deposition rates was suppressed by increasing the injection
                      frequency of the TTIP solution into the vaporizer. A rather
                      independent deposition rate of the input of the TTIP
                      solution was achieved by increasing the injection frequency
                      to 4 Hz, while TiOx films deposited with a low injection
                      frequency of 0.25 Hz showed almost linear film growth rate
                      to the input of the TTIP solution. The deposited TiOx films
                      were amorphous and clearly showed both unipolar and bipolar
                      resistive switching behaviors, which are applicable to
                      nonvolatile memory applications. (c) 2007 The
                      Electrochemical Society.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / CNI / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000246179800056},
      doi          = {10.1149/1.2724126},
      url          = {https://juser.fz-juelich.de/record/59214},
}