%0 Journal Article
%A Waser, R.
%A Aono, M.
%T Nanoionics-based resistive switching memories
%J Nature materials
%V 6
%@ 1476-1122
%C Basingstoke
%I Nature Publishing Group
%M PreJuSER-60292
%P 833
%D 2007
%Z Record converted from VDB: 12.11.2012
%X Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:17972938
%U <Go to ISI:>//WOS:000250615400020
%R 10.1038/nmat2023
%U https://juser.fz-juelich.de/record/60292