TY  - JOUR
AU  - Waser, R.
AU  - Aono, M.
TI  - Nanoionics-based resistive switching memories
JO  - Nature materials
VL  - 6
SN  - 1476-1122
CY  - Basingstoke
PB  - Nature Publishing Group
M1  - PreJuSER-60292
SP  - 833
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:17972938
UR  - <Go to ISI:>//WOS:000250615400020
DO  - DOI:10.1038/nmat2023
UR  - https://juser.fz-juelich.de/record/60292
ER  -