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@ARTICLE{Waser:60292,
      author       = {Waser, R. and Aono, M.},
      title        = {{N}anoionics-based resistive switching memories},
      journal      = {Nature materials},
      volume       = {6},
      issn         = {1476-1122},
      address      = {Basingstoke},
      publisher    = {Nature Publishing Group},
      reportid     = {PreJuSER-60292},
      pages        = {833},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Many metal-insulator-metal systems show electrically
                      induced resistive switching effects and have therefore been
                      proposed as the basis for future non-volatile memories. They
                      combine the advantages of Flash and DRAM (dynamic random
                      access memories) while avoiding their drawbacks, and they
                      might be highly scalable. Here we propose a coarse-grained
                      classification into primarily thermal, electrical or
                      ion-migration-induced switching mechanisms. The
                      ion-migration effects are coupled to redox processes which
                      cause the change in resistance. They are subdivided into
                      cation-migration cells, based on the electrochemical growth
                      and dissolution of metallic filaments, and anion-migration
                      cells, typically realized with transition metal oxides as
                      the insulator, in which electronically conducting paths of
                      sub-oxides are formed and removed by local redox processes.
                      From this insight, we take a brief look into molecular
                      switching systems. Finally, we discuss chip architecture and
                      scaling issues.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / CNI / JARA-FIT},
      ddc          = {610},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Physical / Materials Science, Multidisciplinary
                      / Physics, Applied / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:17972938},
      UT           = {WOS:000250615400020},
      doi          = {10.1038/nmat2023},
      url          = {https://juser.fz-juelich.de/record/60292},
}