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000060668 0247_ $$2DOI$$a10.1143/JPSJ.77.014701
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000060668 084__ $$2WoS$$aPhysics, Multidisciplinary
000060668 1001_ $$0P:(DE-HGF)0$$aYaginuma, S.$$b0
000060668 245__ $$aElectronic Structure of Ultrathin Bismuth Films with A7 and Black-Phosphorus-like Structures
000060668 260__ $$aTokyo$$bThe Physical Society of Japan$$c2008
000060668 300__ $$a014701
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000060668 440_0 $$03931$$aJournal of the Physical Society of Japan$$v77$$x0031-9015
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000060668 520__ $$aUsing scanning tunneling spectroscopy and first-principles calculations, we have studied the electronic structure of two different ultrathin bismuth films on a Si(111)-7 x 7 substrate; a hexagonal film (HEX film) having a bulklike (A7-like) structure and a film having a black-phosphor-us-like structure (BP film). The HEX film is metallic because of spin-orbit (SO)-split surface-state bands lying inside the projected bulk band gap near the Fermi level. Another SO-split surface state is also observed inside the SO gap. The BP film exhibits a significant reduction in metallicity in contrast to the HEX film. This is related to the formation of a very stable paired-layer structure, the mechanism-of which is similar to that of the stabilization of semiconducting bulk black P. However, unlike bulk black P, a certain extent of metallicity still remains. This slight metallicity can be associated with buckling and strain in the BP film, which is analogous to the fact that shear angle distortion in bulk Bi is responsible for its semimetallicity.
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000060668 65320 $$2Author$$asurface electronic structure
000060668 65320 $$2Author$$aultrathin film
000060668 65320 $$2Author$$astructural transformation
000060668 65320 $$2Author$$ascanning tunneling spectroscopy
000060668 65320 $$2Author$$afirst-principles calculations
000060668 65320 $$2Author$$abismuth
000060668 7001_ $$0P:(DE-HGF)0$$aNagaoka, K.$$b1
000060668 7001_ $$0P:(DE-HGF)0$$aNagao, T.$$b2
000060668 7001_ $$0P:(DE-Juel1)130545$$aBihlmayer, G.$$b3$$uFZJ
000060668 7001_ $$0P:(DE-HGF)0$$aKoroteev, Y.M.$$b4
000060668 7001_ $$0P:(DE-HGF)0$$aChulkov, E. V.$$b5
000060668 7001_ $$0P:(DE-HGF)0$$aNakayama, T.$$b6
000060668 773__ $$0PERI:(DE-600)2042147-3$$a10.1143/JPSJ.77.014701$$gVol. 77, p. 014701$$p014701$$q77<014701$$tJournal of the Physical Society of Japan$$v77$$x0031-9015$$y2008
000060668 8567_ $$uhttp://dx.doi.org/10.1143/JPSJ.77.014701
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000060668 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000060668 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000060668 9201_ $$0I:(DE-Juel1)VDB781$$d31.12.2010$$gIFF$$kIFF-1$$lQuanten-Theorie der Materialien$$x0
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