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@ARTICLE{Yaginuma:60668,
      author       = {Yaginuma, S. and Nagaoka, K. and Nagao, T. and Bihlmayer,
                      G. and Koroteev, Y.M. and Chulkov, E. V. and Nakayama, T.},
      title        = {{E}lectronic {S}tructure of {U}ltrathin {B}ismuth {F}ilms
                      with {A}7 and {B}lack-{P}hosphorus-like {S}tructures},
      journal      = {Journal of the Physical Society of Japan},
      volume       = {77},
      issn         = {0031-9015},
      address      = {Tokyo},
      publisher    = {The Physical Society of Japan},
      reportid     = {PreJuSER-60668},
      pages        = {014701},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Using scanning tunneling spectroscopy and first-principles
                      calculations, we have studied the electronic structure of
                      two different ultrathin bismuth films on a Si(111)-7 x 7
                      substrate; a hexagonal film (HEX film) having a bulklike
                      (A7-like) structure and a film having a
                      black-phosphor-us-like structure (BP film). The HEX film is
                      metallic because of spin-orbit (SO)-split surface-state
                      bands lying inside the projected bulk band gap near the
                      Fermi level. Another SO-split surface state is also observed
                      inside the SO gap. The BP film exhibits a significant
                      reduction in metallicity in contrast to the HEX film. This
                      is related to the formation of a very stable paired-layer
                      structure, the mechanism-of which is similar to that of the
                      stabilization of semiconducting bulk black P. However,
                      unlike bulk black P, a certain extent of metallicity still
                      remains. This slight metallicity can be associated with
                      buckling and strain in the BP film, which is analogous to
                      the fact that shear angle distortion in bulk Bi is
                      responsible for its semimetallicity.},
      keywords     = {J (WoSType)},
      cin          = {CNI / IFF-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB781},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Multidisciplinary},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000252632700020},
      doi          = {10.1143/JPSJ.77.014701},
      url          = {https://juser.fz-juelich.de/record/60668},
}