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| Home > Publications database > Electronic Structure of Ultrathin Bismuth Films with A7 and Black-Phosphorus-like Structures > print |
| 001 | 60668 | ||
| 005 | 20180211182908.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1143/JPSJ.77.014701 |
| 024 | 7 | _ | |2 WOS |a WOS:000252632700020 |
| 037 | _ | _ | |a PreJuSER-60668 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Multidisciplinary |
| 100 | 1 | _ | |a Yaginuma, S. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Electronic Structure of Ultrathin Bismuth Films with A7 and Black-Phosphorus-like Structures |
| 260 | _ | _ | |a Tokyo |b The Physical Society of Japan |c 2008 |
| 300 | _ | _ | |a 014701 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of the Physical Society of Japan |x 0031-9015 |0 3931 |v 77 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Using scanning tunneling spectroscopy and first-principles calculations, we have studied the electronic structure of two different ultrathin bismuth films on a Si(111)-7 x 7 substrate; a hexagonal film (HEX film) having a bulklike (A7-like) structure and a film having a black-phosphor-us-like structure (BP film). The HEX film is metallic because of spin-orbit (SO)-split surface-state bands lying inside the projected bulk band gap near the Fermi level. Another SO-split surface state is also observed inside the SO gap. The BP film exhibits a significant reduction in metallicity in contrast to the HEX film. This is related to the formation of a very stable paired-layer structure, the mechanism-of which is similar to that of the stabilization of semiconducting bulk black P. However, unlike bulk black P, a certain extent of metallicity still remains. This slight metallicity can be associated with buckling and strain in the BP film, which is analogous to the fact that shear angle distortion in bulk Bi is responsible for its semimetallicity. |
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| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a surface electronic structure |
| 653 | 2 | 0 | |2 Author |a ultrathin film |
| 653 | 2 | 0 | |2 Author |a structural transformation |
| 653 | 2 | 0 | |2 Author |a scanning tunneling spectroscopy |
| 653 | 2 | 0 | |2 Author |a first-principles calculations |
| 653 | 2 | 0 | |2 Author |a bismuth |
| 700 | 1 | _ | |a Nagaoka, K. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Nagao, T. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Bihlmayer, G. |b 3 |u FZJ |0 P:(DE-Juel1)130545 |
| 700 | 1 | _ | |a Koroteev, Y.M. |b 4 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Chulkov, E. V. |b 5 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Nakayama, T. |b 6 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1143/JPSJ.77.014701 |g Vol. 77, p. 014701 |p 014701 |q 77<014701 |0 PERI:(DE-600)2042147-3 |t Journal of the Physical Society of Japan |v 77 |y 2008 |x 0031-9015 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1143/JPSJ.77.014701 |
| 909 | C | O | |o oai:juser.fz-juelich.de:60668 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2008 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 920 | 1 | _ | |k IFF-1 |l Quanten-Theorie der Materialien |d 31.12.2010 |g IFF |0 I:(DE-Juel1)VDB781 |x 0 |
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| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-1-20110106 |
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