%0 Journal Article
%A Schindler, C.
%A Staikov, G.
%A Waser, R.
%T Electrode kinetics of Cu-SiO2-based resistive switching cells: overcoming the voltage-time dilemma of electrochemical metallization memories
%J Applied physics letters
%V 94
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-6077
%P 072109
%D 2009
%Z This work was funded in parts by the joint DFG/JST initiative. The supply of wafers by Samsung Electronics, Korea is gratefully acknowledged. We thank Rainer Bruchhaus, Qimonda AG, and Michael N. Kozicki, Arizona State University, for fruitful discussions.
%X The kinetics of the switching process in Cu-SiO2-based electrochemical metallization memory cells was investigated as a function of the switching voltage and the SiO2 film thickness. We observe an exponential dependence of the switching rate on the switching voltage and no significant thickness dependence in the range from 5 to 20 nm SiO2. We conclude from our data that the cathodic electrodeposition represents the rate-limiting step of the switching kinetics. The voltage-time dilemma seems to be overcome by the exponential dependence of the switching rate in combination with a threshold voltage presumably originating from a nucleation overpotential.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000263599200040
%R 10.1063/1.3077310
%U https://juser.fz-juelich.de/record/6077