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@ARTICLE{Schindler:6077,
      author       = {Schindler, C. and Staikov, G. and Waser, R.},
      title        = {{E}lectrode kinetics of {C}u-{S}i{O}2-based resistive
                      switching cells: overcoming the voltage-time dilemma of
                      electrochemical metallization memories},
      journal      = {Applied physics letters},
      volume       = {94},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-6077},
      pages        = {072109},
      year         = {2009},
      note         = {This work was funded in parts by the joint DFG/JST
                      initiative. The supply of wafers by Samsung Electronics,
                      Korea is gratefully acknowledged. We thank Rainer Bruchhaus,
                      Qimonda AG, and Michael N. Kozicki, Arizona State
                      University, for fruitful discussions.},
      abstract     = {The kinetics of the switching process in Cu-SiO2-based
                      electrochemical metallization memory cells was investigated
                      as a function of the switching voltage and the SiO2 film
                      thickness. We observe an exponential dependence of the
                      switching rate on the switching voltage and no significant
                      thickness dependence in the range from 5 to 20 nm SiO2. We
                      conclude from our data that the cathodic electrodeposition
                      represents the rate-limiting step of the switching kinetics.
                      The voltage-time dilemma seems to be overcome by the
                      exponential dependence of the switching rate in combination
                      with a threshold voltage presumably originating from a
                      nucleation overpotential.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000263599200040},
      doi          = {10.1063/1.3077310},
      url          = {https://juser.fz-juelich.de/record/6077},
}