000006083 001__ 6083
000006083 005__ 20190625110517.0
000006083 0247_ $$2DOI$$a10.1016/j.mee.2009.04.004
000006083 0247_ $$2WOS$$aWOS:000271363900025
000006083 0247_ $$2altmetric$$aaltmetric:21802561
000006083 037__ $$aPreJuSER-6083
000006083 041__ $$aeng
000006083 082__ $$a620
000006083 084__ $$2WoS$$aEngineering, Electrical & Electronic
000006083 084__ $$2WoS$$aNanoscience & Nanotechnology
000006083 084__ $$2WoS$$aOptics
000006083 084__ $$2WoS$$aPhysics, Applied
000006083 1001_ $$0P:(DE-Juel1)VDB75720$$aRosezin, R.$$b0$$uFZJ
000006083 245__ $$aElectrical properties of Pt interconnects for passive crossbar memory arrays
000006083 260__ $$a[S.l.] @$$bElsevier$$c2009
000006083 300__ $$a2275 - 2278
000006083 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000006083 3367_ $$2DataCite$$aOutput Types/Journal article
000006083 3367_ $$00$$2EndNote$$aJournal Article
000006083 3367_ $$2BibTeX$$aARTICLE
000006083 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000006083 3367_ $$2DRIVER$$aarticle
000006083 440_0 $$04347$$aMicroelectronic Engineering$$v86$$x0167-9317$$y11
000006083 500__ $$aRecord converted from VDB: 12.11.2012
000006083 520__ $$aWe report on the fabrication and the electrical characterization of platinum interconnects for novel nonvolatile memory technologies. These nanowires present an important and essential contribution to the deep nanometer scaling of alternative architectures beyond CMOS, e.g. nanocrossbar arrays with resistance switching junctions. The nanowires, which have a thickness of 25 nm and a width ranging from 200 nm down to 40 nm, were patterned using electron beam direct writing. They were deposited by UHV electron beam evaporation in combination with a lift-off process.The electrical characteristic is increasingly affected by the contribution of surface effects like scattering at grain boundaries and scattering at the surfaces as the wire dimensions become smaller. With decreasing width of the platinum wire an increasing resistivity was observed, which is consistent with the theories of Fuchs-Sondheimer and Mayadas-Shatzkes. Our studies have shown that the investigated structures possess a high stability concerning the operational current densities up to 4 x 10(7) A/cm(2), and an additional annealing step results in an improvement of the electrical wire properties, which is explained by a higher quality of the grain boundaries and side walls. (C) 2009 Elsevier B.V. All rights reserved.
000006083 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000006083 588__ $$aDataset connected to Web of Science
000006083 650_7 $$2WoSType$$aJ
000006083 65320 $$2Author$$aNano electrodes
000006083 65320 $$2Author$$aNano crossbar arrays
000006083 65320 $$2Author$$aNano structuring
000006083 65320 $$2Author$$aResistive switching
000006083 7001_ $$0P:(DE-Juel1)VDB61380$$aNauenheim, C.$$b1$$uFZJ
000006083 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, S.$$b2$$uFZJ
000006083 7001_ $$0P:(DE-Juel1)VDB15125$$aKügeler, C.$$b3$$uFZJ
000006083 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$uFZJ
000006083 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2009.04.004$$gVol. 86, p. 2275 - 2278$$p2275 - 2278$$q86<2275 - 2278$$tMicroelectronic engineering$$v86$$x0167-9317$$y2009
000006083 8567_ $$uhttp://dx.doi.org/10.1016/j.mee.2009.04.004
000006083 909CO $$ooai:juser.fz-juelich.de:6083$$pVDB
000006083 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000006083 9141_ $$y2009
000006083 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000006083 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000006083 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000006083 9201_ $$0I:(DE-Juel1)VDB554$$gIBN$$kIBN-PT$$lProzesstechnologie$$x2
000006083 970__ $$aVDB:(DE-Juel1)114189
000006083 980__ $$aVDB
000006083 980__ $$aConvertedRecord
000006083 980__ $$ajournal
000006083 980__ $$aI:(DE-Juel1)PGI-7-20110106
000006083 980__ $$aI:(DE-82)080009_20140620
000006083 980__ $$aI:(DE-Juel1)VDB554
000006083 980__ $$aUNRESTRICTED
000006083 981__ $$aI:(DE-Juel1)PGI-7-20110106
000006083 981__ $$aI:(DE-Juel1)VDB554
000006083 981__ $$aI:(DE-Juel1)VDB881