%0 Journal Article
%A Meier, M.
%A Gilles, S.
%A Rosezin, R.
%A Schindler, S.
%A Trellenkamp, S.
%A Rüdiger, A.
%A Mayer, D.
%A Kügeler, C.
%A Waser, R.
%T Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
%J Microelectronic engineering
%V 86
%@ 0167-9317
%C [S.l.] @
%I Elsevier
%M PreJuSER-6109
%D 2009
%Z Record converted from VDB: 12.11.2012
%X Resistively switching materials are in the focus of investigations for use in next-generation non-volatile resistive random access memories (RRAM). Crossbar structures with integrated resistively switching spin-on glass were fabricated using UV nanoimprint lithography. 32 x 32 bit crossbar arrays with a half pitch of 50 nm were achieved. The switching characteristic of our Pt/spin-on glass/Ag material stack was proved on 100 x 100 nm(2) nanocells. It shows resistance switching behavior which is comparable to material systems where the formation and dissolution of metallic filaments through a porous matrix is assumed to be the responsible switching mechanism. (C) 2009 Elsevier B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000267273300158
%R 10.1016/j.mee.2009.01.054
%U https://juser.fz-juelich.de/record/6109