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000006109 084__ $$2WoS$$aEngineering, Electrical & Electronic
000006109 084__ $$2WoS$$aNanoscience & Nanotechnology
000006109 084__ $$2WoS$$aOptics
000006109 084__ $$2WoS$$aPhysics, Applied
000006109 1001_ $$0P:(DE-Juel1)VDB55622$$aMeier, M.$$b0$$uFZJ
000006109 245__ $$aResistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
000006109 260__ $$a[S.l.] @$$bElsevier$$c2009
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000006109 520__ $$aResistively switching materials are in the focus of investigations for use in next-generation non-volatile resistive random access memories (RRAM). Crossbar structures with integrated resistively switching spin-on glass were fabricated using UV nanoimprint lithography. 32 x 32 bit crossbar arrays with a half pitch of 50 nm were achieved. The switching characteristic of our Pt/spin-on glass/Ag material stack was proved on 100 x 100 nm(2) nanocells. It shows resistance switching behavior which is comparable to material systems where the formation and dissolution of metallic filaments through a porous matrix is assumed to be the responsible switching mechanism. (C) 2009 Elsevier B.V. All rights reserved.
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000006109 65320 $$2Author$$aResistive switching
000006109 65320 $$2Author$$aNanoimprint lithography
000006109 65320 $$2Author$$aCrossbar array
000006109 65320 $$2Author$$aMemory devices
000006109 7001_ $$0P:(DE-Juel1)VDB67357$$aGilles, S.$$b1$$uFZJ
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