TY  - JOUR
AU  - Meier, M.
AU  - Gilles, S.
AU  - Rosezin, R.
AU  - Schindler, S.
AU  - Trellenkamp, S.
AU  - Rüdiger, A.
AU  - Mayer, D.
AU  - Kügeler, C.
AU  - Waser, R.
TI  - Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
JO  - Microelectronic engineering
VL  - 86
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - PreJuSER-6109
PY  - 2009
N1  - Record converted from VDB: 12.11.2012
AB  - Resistively switching materials are in the focus of investigations for use in next-generation non-volatile resistive random access memories (RRAM). Crossbar structures with integrated resistively switching spin-on glass were fabricated using UV nanoimprint lithography. 32 x 32 bit crossbar arrays with a half pitch of 50 nm were achieved. The switching characteristic of our Pt/spin-on glass/Ag material stack was proved on 100 x 100 nm(2) nanocells. It shows resistance switching behavior which is comparable to material systems where the formation and dissolution of metallic filaments through a porous matrix is assumed to be the responsible switching mechanism. (C) 2009 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000267273300158
DO  - DOI:10.1016/j.mee.2009.01.054
UR  - https://juser.fz-juelich.de/record/6109
ER  -